Mo Dopant Concentration Effect on Nanostructured WO3 Thin Films Grown by Spray Deposition Surface Properties

• Popescu A.G.M., Tudose I.V., Romanițan C., Brîncoveanu O., Gavrilă R., Manica M., Pachiu C., Schiopu P., Vlădescu M., Pascariu P., Suchea M.P. „Mo Dopant Concentration Effect on Nanostructured WO3 Thin Films Grown by Spray Deposition Surface Properties” 2024 International Semiconductor Conference (CAS), pp. 171-174. 
• https://doi.org/10.1109/CAS62834.2024.10736875  

Abstract:

The present communication reports on the effect of Mo dopant concentration on nanostructured WO3 thin films deposited by spray deposition surface properties. Monoclinic Mo doped WO3 thin films were obtained by spray deposition method for further integration in gas sensors. Mo-doped WO3 thin films are expected to have enhanced gas sensing properties, particularly for reducing gases like hydrogen (H2) and nitrogen dioxide (NO2). The improved performance is due to the increased surface area, enhanced conductivity, and modified surface chemistry facilitating gas adsorption and reaction. The optimal doping concentration balances increased active sites and electronic properties without excessive defect formation. Further studies are ongoing.

Date of Conference: 09-11 October 2024

Date Added to IEEE Xplore: 31 October 2024